PJSEMI(平晶微)China
2SB1386SQ-R
Bipolar Transistors - Unspecified TypePNP,三极管 VCEO:-20V,IC:-5A,PD:0.5W, HFE:180~390,VCE(SAT):-1V(MAX)
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage20 V
Collector current5 AMax
Power500 mWMax
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 20V |
| 集电极电流(Ic) | 5A |
| Other | |
| 晶体管类型 | PNP |
| 耗散功率(Pd) | 500mW |
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