Rohm SemiconductorJapan
TRANS NPN DARL 32V 0.3A SPT
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage32 V
Collector current300 mAMax
DC current gain10000100mA
Power300 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 300 mA |
| Power - Max | 300 mW |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 3V |
| Frequency - Transition | 200MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Supplier Device Package | SPT |
| Other | |
| Base Product Number | 2SC2062 |
| Mfr | Rohm Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |