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Technical parameters

Power
IC-最大集电极电流0.5A
VCEO-CE结击穿电压400V
VCEO-集射级击穿电压400V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益7
Hfe-最小直流增益7
Environment and package
封装类型1SIP
最大工作温度150℃
Other
Pd-功率耗散0.75W
Pd-最大功率耗散0.75W
引脚数量13

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