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Technical parameters

Power
IC-最大集电极电流0.05A
VCBO-集基级击穿电压1350V
VCEO-CE结击穿电压20V
VCEO-集射级击穿电压800V
VEBO-射基级击穿电压9V
AC and DC characteristics
fT-变换频率3.5MHZ
hFE-最小直流增益10
Hfe-最小直流增益30
Environment and package
封装类型1SOT23
Other
Pd-功率耗散2W
Pd-最大功率耗散0.15W
引脚数量13

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