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Technical parameters

Power
IC-最大集电极电流4A
VCBO-CB结击穿电压40V
VCEO-CE结击穿电压40V
VEBO-EB结击穿电压6V
AC and DC characteristics
fT-变换频率70MHZ
Hfe-最小直流增益300
Environment and package
封装类型1SOT89
Other
Pd-最大功率耗散1W
VCE(sat)-CE结饱和压降0.09V
引脚数量13

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