onsemiUnited States
POWER BIPOLAR TRANSISTOR NPN
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage700 V
Collector current8 AMax
DC current gain101A
Power3 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 10mA |
| Current - Collector (Ic) (Max) | 8 A |
| Power - Max | 3 W |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-3P-3 Full Pack |
| Supplier Device Package | TO-3PMLH |
| Other | |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 4.5A |
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