Rohm SemiconductorJapan
TRANS NPN 30V 0.5A EMT3F
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage30 V
Collector current500 mAMax
DC current gain200100mA
Power150 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 200nA (ICBO) |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 360MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Other | |
| Base Product Number | 2SCR502 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 200mA |