Yangjie TechnologyChina
Transistors - Bipolar (BJT) - Si
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage32 V
Collector current1 AMax
DC current gain180500mA
Power500 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 500 mW |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89 |
| Other | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
Documents
DatasheetDatasheet · 485.6 KB · 2026-09-22EnvironmentalEnvironmental · 4.4 MB · 2026-09-22EnvironmentalEnvironmental · 4.4 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 315.6 KB · 2026-09-22
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