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HomeBipolar Transistors - Unspecified TypePJSEMI(平晶微)2SD965ASQ-R
PJSEMI(平晶微)China

2SD965ASQ-R

Bipolar Transistors - Unspecified Type
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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current5 AMax
Power750 mWMax
Power
集射极击穿电压(Vceo)30V
集电极电流(Ic)5A
Other
晶体管类型NPN
耗散功率(Pd)750mW

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DatasheetDatasheet · 776.1 KB · 2026-09-21DatasheetDatasheet · 767.8 KB · 2026-09-21DatasheetDatasheet · 432.1 KB · 2026-09-21DatasheetDatasheet · 432.0 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 421.5 KB · 2026-09-21DatasheetDatasheet · 417.8 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 240.7 KB · 2026-09-21
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