SankenJapan
MOSFET N-CH 200V 18A TO220F
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current18 A
On-resistance175 mΩMax · 9A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 35W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V |
| Mfr | Sanken |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 9A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
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