2SK3353 - N-CHANNEL POWER MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current82 A
On-resistance9.5 mΩMax · 41A
Gate threshold voltage2.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Power Dissipation (Max) | 1.5W (Ta), 95W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Package | Bulk |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 10 V |
| Mfr | Renesas |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 41A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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