VBsemi(微碧半导体)China
40P03GP-VB
Transistors - FETs, MOSFETs - SingleTO220；P—Channel沟道,-30V；-70A；RDS(ON)=8mΩ@VGS=10V,VGS=20V；Vth=-1~-2.5V；
All alternatives
View full reportTechnical parameters
No technical parameters are available for this part.
TO220；P—Channel沟道,-30V；-70A；RDS(ON)=8mΩ@VGS=10V,VGS=20V；Vth=-1~-2.5V；
No technical parameters are available for this part.