UTC(友顺)China

4N65KG-TN3-R

Transistors - FETs, MOSFETs - Single
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Technical parameters

Key specs

Drain-source voltage650 V
Continuous drain current4 A
Gate threshold voltage4 VMax
漏源电压(Vdss)650V
连续漏极电流(Id)4A
阈值电压(Vgs(th))4V

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