VBsemi(微碧半导体)China
4N80L-TN3-R-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；是一款单N沟道MOSFET，采用SJ_Multi-EPI技术，适用于各种电子应用领域。TO252；N—Channel沟道,800V；2.8A；RDS(ON)=2380mΩ@VGS=10V,VGS=30V；Vth=2~4V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage800 V
Continuous drain current2.8 A
On-resistance2.38 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 800V |
| 连续漏极电流(Id) | 2.8A |
| Other | |
| 导通电阻(RDS(on)) | 2.38Ω@10V |
| 数量 | 1个N沟道 |