VBsemi(微碧半导体)China
5N50L-TN3-R-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,650V；5A；RDS(ON)=950mΩ@VGS=10V,VGS=±30V；Vth=2~4V；
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Key specs
Drain-source voltage650 V
Continuous drain current5 A
On-resistance950 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 5A |
| Other | |
| 导通电阻(RDS(on)) | 950mΩ@10V |
| 耗散功率(Pd) | 205W |