Microchip TechnologyUnited States
DIODE GEN PURP 300V 25A NC
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View full reportTechnical parameters
Key specs
Reverse voltage300 V
Average rectified current25 A
Forward voltage1.2 VMax · 10 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 25A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -65°C~150°C |
| Package | Bulk |
| Package / Case | NC, Module |
| Supplier Device Package | NC |
| Other | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
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