PACKAGE OUTLINE (FM)

AM143438WM-FM-R

AMP MMIC GAAS PHEMT 1.4-3.4GHZ 38DBM 10PIN FLANGE

GaAs pHEMT MMIC power amplifier, 1.4-3.4GHz, P1dB 38dBm, FM package, RoHS compliant.Checked against the datasheet

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18 items

Parameter	Value and test conditions	Source
Package	FM
RoHS	Compliant
Frequency	1.4 to 3.4 GHz
Small Signal Gain	Min 18 dB, Typ 20.5 dB (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
P1dB	Min 35.5 dBm, Typ 37.5 dBm (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
Psat	Typ 38.0 dBm (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
IP3	Typ 43 dBm (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
Efficiency @ P1dB	Typ 30 % (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
Input Return Loss	Min 15 dB, Typ 20 dB (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
Output Return Loss	Min 3 dB, Typ 5 dB (Vdd=+12V, Vgs=-0.9V, Idq=1300mA, Ta=25°C)
Thermal Resistance	Typ 5 °C/W
Drain source voltage	Max 14 V
Gate source voltage	Max -3 V
Drain source current	Max 1.5 A
Continuous dissipation at room temperature	Max 25 W
Channel temperature	Max 175 °C
Storage temperature	-55°C to +135°C
Recommended Operating Voltage	10 - 14V

All parameters (9)ExpandCollapse

Power
Drain source voltage	14 V
AC and DC characteristics
Frequency	1.4 to 3.4 GHz
Small Signal Gain	> 20 dB
Environment and package
Channel temperature	175 °C
Continuous dissipation at room temperature	25 W
Package	FM
Storage temperature	-55°C to +135°C
Other
Efficiency @ P1dB	30 %
P1dB	38 dBm

PackageFM

Pin	Name	Function
1		Vdd1 Power
2	NC	No Connection
3	RF	in RF Input
4	NC	No Connection
5		Vgs1 Gate Bias 1
6		Vgs2 Gate Bias 2
7	RF	out & Vdd2 RF Output & Power 2
8	RF	out & Vdd2 RF Output & Power 2
9	RF	out & Vdd2 RF Output & Power 2
10		Vgs2 Gate Bias 2

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