PIN LAYOUT

AM143440WM-BM-R

AMP RF GAAS PHEMT 1.4-3.4GHZ 39DBM CERAMIC

AM143440WM-BM-R is a GaAs pHEMT MMIC power amplifier, 1.4-3.4GHz, P1dB typ 38.5dBm, ceramic package, RoHS compliant.Checked against the datasheet

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19 items

Parameter	Value and test conditions	Source
Package	Ceramic package (BM)
Operating Temperature	Ta = 25°C (Typical Performance); Tsto = -55°C to +135°C (Storage)
RoHS	Compliant
Frequency Range	1.4 to 3.4GHz
Small Signal Gain	Min 18dB, Typ 20.5dB (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
P1dB	Min 36.5dBm, Typ 38.5dBm (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
Psat	Typ 39.0dBm (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
IP3	Typ 44dBm (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
Efficiency @ P1dB	Typ 35% (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
Input Return Loss	Min 15dB, Typ 20dB (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
Output Return Loss	Min 3dB, Typ 5dB (Vdd=+12V, Vgs=-0.9V, Ta=25°C)
Thermal Resistance	Typ 5°C/W
Drain source voltage	Max 14V
Gate source voltage	Max -3V
Drain source current	Max 1.5A
Continuous dissipation at room temperature	Max 25W
Channel temperature	Max 175°C
Storage temperature	-55°C to +135°C
Recommended Operating Voltage	10 to 14V

All parameters (9)ExpandCollapse

Power
Drain source voltage	14V
AC and DC characteristics
Frequency	1.4 to 3.4GHz
Small Signal Gain	> 20dB
Environment and package
Channel temperature	175°C
Continuous dissipation at room temperature	25W
Package	Ceramic
Storage temperature	-55°C to +135°C
Other
Efficiency @ P1dB	> 40%
P1dB	39dBm

Pin	Name	Function
1		Vdd1 Power Input
2	NC	No Connection
3	RF	in RF Input
4	NC	No Connection
5		Vgs1 Gate Bias 1
6		Vgs2 Gate Bias 2
7	RF	out & Vdd2 RF Output & Power 2
8	RF	out & Vdd2 RF Output & Power 2
9	RF	out & Vdd2 RF Output & Power 2
10		Vgs2 Gate Bias 2

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