PIN LAYOUT
AMP RF GAAS PHEMT 1.4-3.4GHZ 39DBM CERAMIC
GaAs pHEMT MMIC power amplifier, 1.4-3.4GHz, P1dB 39dBm, FM ceramic package, RoHS compliant.Checked against the datasheet
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View full reportTechnical parameters
Datasheet-verified parameters
18 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Package | FM (Ceramic package with gold plated copper carrier) | |
| RoHS | Compliant | |
| Frequency applications | 1.4 to 3.4GHz | |
| P1dB | Min 36.5dBm, Typ 38.5dBm (Vdd=+12V, Vgs=-0.9V, Ta=25°C) | |
| Psat | Typ 39.0dBm (Vdd=+12V, Vgs=-0.9V, Ta=25°C) | |
| Small Signal Gain | Min 18dB, Typ 20.5dB (Vdd=+12V, Vgs=-0.9V, Ta=25°C) |
All parameters (9)
| Power | |
|---|---|
| Drain source voltage | 14V |
| AC and DC characteristics | |
| Frequency | 1.4 to 3.4GHz |
| Small Signal Gain | > 20dB |
| Environment and package | |
| Channel temperature | 175°C |
| Continuous dissipation at room temperature | 25W |
| Package | Ceramic |
| Storage temperature | -55°C to +135°C |
| Other | |
| Efficiency @ P1dB | > 40% |
| P1dB | 39dBm |
Pinout and package
PIN LAYOUT
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Vdd1 (Power Input) | ||
| 2 | NC | (No Connection) | |
| 3 | RF | in (RF Input) | |
| 4 | NC | (No Connection) | |
| 5 | Vgs1 (Gate Bias 1) | ||
| 6 | Vgs2 (Gate Bias 2) | ||
| 7 | RF | out & Vdd2 (RF Output & Power 2) | |
| 8 | RF | out & Vdd2 (RF Output & Power 2) | |
| 9 | RF | out & Vdd2 (RF Output & Power 2) | |
| 10 | Vgs2 (Gate Bias 2) |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.