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Technical parameters

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
PackageFM (Ceramic package with gold plated copper flange carrier)
RoHSCompliant
FrequencyMin: 1.8 – 3.0GHz, Typ: 1.4 – 3.4GHz
Small Signal GainMin: 14dB, Typ: 18dB
Gain RippleTyp: ± 2.0dB, Max: ± 3.0dB
P1dBMin: 35.0dBm, Typ: 37dBm
PsatTyp: 38dBm
IP3Typ: 43dBm
Efficiency @ P1dBTyp: 30%
Input Return LossMin: 10dB, Typ: 15dB
Output Return LossMin: 6dB, Typ: 10dB
Thermal ResistanceTyp: 5°C/W
Recommended Operating VoltageVdd = +12V, Vgs = -0.90V
Recommended Operating CurrentIdq = 1300mA
Absolute Maximum Drain Source Voltage13V
Absolute Maximum Gate Source Voltage-5V
Absolute Maximum Drain Source Current2.0A
Continuous Dissipation at Room Temperature25W
Absolute Maximum Channel Temperature175°C
Storage Temperature-55°C to +135°C
All parameters (10)ExpandCollapse
Power
Drain source voltage13V
AC and DC characteristics
Frequency1.4 – 3.4GHz (Typ)
Small Signal Gain18dB (Typ)
Environment and package
Channel temperature175°C
Continuous dissipation at room temperature25W
Storage temperature-55°C to +135°C
Other
Efficiency @ P1dB30% (Typ)
IP343dBm (Typ)
P1dB37dBm (Typ)
Psat38dBm (Typ)

Pinout and package

PACKAGE OUTLINE (FM) PIN LAYOU…
PACKAGE OUTLINE (FM) PIN LAYOU…
Package: FM (Ceramic package with gold plated copper flange carrier)
PinNameFunctionSource
1Vdd1 (Power Positive)
2NC(No Connection)
3RFin (RF Input)
4NC(No Connection)
5Vgs1 (Gate Bias 1)
6Vgs2 (Gate Bias 2)
7Vdd2 (Power Positive)
8RFout (RF Output)
9Vdd2 (Power Positive)
10Vgs2 (Gate Bias 2)

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.