SHINDENGEN(新电元)Japan
This diode uses a barrier that is formed with a metal-semiconductor junction. Compared to the one using a P-N junction, the forward rise voltage is lower and the switching speed is extremely high, making it the most suitable rectifier for high speed low V F diodes. S series：Balanced V F and I R M series：Balanced I R and Low V F N series：High Voltage H series：Ultra Low V F J series：Low I R SL series：Ultra Low I R , Tj = 175℃ guaranteed Y series：Balanced low I R
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View full reportTechnical parameters
Key specs
Reverse voltage150 V
Average rectified current3 A
| Power | |
|---|---|
| Average forward current | 4.71 |
| Forward voltage | 0.9 |
| Repetitive peak reverse voltage | 150 |
| Reverse current | 0.1 |
| Surge forward current | 60 |
| Environment and package | |
| Junction temperature | -55 to 150 |
| Package (House Name) | nSMC_FL |
| Storage temperrature | -55 to 150 |
| Thermal resistance | 70 |
| Other | |
| AEC-Q101 | YES |
| As | Not identified |
| Automotive | YES |
| Br | Not identified |
| Conditions | Junction to ambient (P.C.Board mounted) |
| Ctrl Number | AMC03HA15_Rev.01(2026.02) |
| I F (AV) | 3A |
| I FSM | 60A |
| Ni | Not identified |
| Pb | Not identified |
| Rp | Not identified |
| Sb | Not identified |
| Series | MC |
| V F (max.) | 0.90V |
| V RRM | 150V |