YTL(亚特联)China
N和P沟道增强型MOSFET，低导通电阻、低输入电容、快速开关速度、低输入/输出泄漏，无铅且符合RoHS标准
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View full reportTechnical parameters
Key specs
ChannelN + P
Drain-source voltage30 V
Continuous drain current3.3 ~ 4.6 A
On-resistance83 mΩMax · 10V，10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 3.3A；4.6A |
| Other | |
| 导通电阻(RDS(on)) | 83mΩ@10V；34mΩ@10V |
| 数量 | 1个N沟道+1个P沟道 |
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