APM(永源微电子)China
P沟道增强型MOSFET,电流:3.3A,耐压:60V
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current3.3 A
On-resistance185 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 3.3A |
| Other | |
| 导通电阻(RDS(on)) | 185mΩ@10V |
| 数量 | 1个P沟道 |