Microchip TechnologyUnited States
MOSFET N-CH 600V 43A ISOTOP
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current43 A
On-resistance125 mΩMax · 21.5A
Gate threshold voltage4 VMax · 2.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Power Dissipation (Max) | 565W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | ISOTOP® |
| Other | |
| Base Product Number | APL602 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 21.5A, 12V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |