Microchip TechnologyUnited States
MOSFET N-CH 1000V 23A T-MAX
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current23 A
On-resistance450 mΩMax · 11.5A
Gate threshold voltage5 VMax · 2.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 565W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | T-MAX™ [B2] |
| Other | |
| Base Product Number | APT10045 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 11.5A, 10V |
| Series | POWER MOS 7® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
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