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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage800 V
Continuous drain current20 A
On-resistance430 mΩMax · 10A
Gate threshold voltage5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)800 V
Environment and package
Mounting TypeSurface Mount
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageD3 [S]
Other
Base Product NumberAPT8043
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs430mOhm @ 10A, 10V
SeriesPOWER MOS 7®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 1mA

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