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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C49A
Drain to Source Voltage (Vdss)600V
Power - Max250W
Environment and package
Mounting TypeChassis Mount
Operating Temperature-40°C~150°C(TJ)
PackageBulk
Package / CaseSP1
Supplier Device PackageSP1
Other
Base Product NumberAPTC60
FET FeatureStandard
FET Type3 N Channel (Phase Leg + Boost Chopper)
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 25V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs45mOhm @ 24.5A, 10V
SeriesCoolMOS™
Vgs(th) (Max) @ Id3.9V @ 3mA

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