Microsemi CorporationUnited States
IGBT MODULE 1200V 300A 1400W D3
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 5 mA |
| Current - Collector (Ic) (Max) | 300 A |
| Power - Max | 1400 W |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | D-3 Module |
| Supplier Device Package | D3 |
| Other | |
| Configuration | Single |
| IGBT Type | NPT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V |
| Mfr | Microsemi Corporation |
| NTC Thermistor | No |
| Product Status | Obsolete |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 200A |
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