Microsemi CorporationUnited States
IGBT MODULE 1200V 75A 312W SP1
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 250 µA |
| Current - Collector (Ic) (Max) | 75 A |
| Power - Max | 312 W |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
| Other | |
| Configuration | Single |
| IGBT Type | NPT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 3.45 nF @ 25 V |
| Mfr | Microsemi Corporation |
| NTC Thermistor | Yes |
| Product Status | Obsolete |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |