Microchip TechnologyUnited States
MOSFET 2N-CH 1000V 78A SP6
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Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 78A |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Power - Max | 1250W |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SP6 |
| Supplier Device Package | SP6 |
| Other | |
| Base Product Number | APTM100 |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 744nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 20700pF @ 25V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 39A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
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