Microsemi CorporationUnited States
MOSFET 2N-CH 1200V 34A SP4
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34A |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 780W |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
| Other | |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 374nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 25V |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 348mOhm @ 17A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |