Microchip TechnologyUnited States
MOSFET 4N-CH 1200V 34A SP6
All alternatives
View full report15 alternatives on file, including 1 Chinese alternatives. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34A |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 780W |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SP6 |
| Supplier Device Package | SP6 |
| Other | |
| Base Product Number | APTM120 |
| FET Feature | Standard |
| FET Type | 4 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 374nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 25V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 348mOhm @ 17A, 10V |
| Series | POWER MOS 7® |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
Documents
No documents are linked to this part yet.