Microchip TechnologyUnited States
MOSFET N-CH 1200V 116A SP6
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current116 A
On-resistance120 mΩMax · 58A
Gate threshold voltage5 VMax · 20mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 3290W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SP6 |
| Supplier Device Package | SP6 |
| Other | |
| Base Product Number | APTM120 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28900 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 58A, 10V |
| Series | POWER MOS 7® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 20mA |
Documents
No documents are linked to this part yet.