Microchip TechnologyUnited States
MOSFET 4N-CH 200V 89A SP4
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 89A |
| Drain to Source Voltage (Vdss) | 200V |
| Power - Max | 357W |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
| Other | |
| Base Product Number | APTM20 |
| FET Feature | Standard |
| FET Type | 4 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6850pF @ 25V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 44.5A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Documents
No documents are linked to this part yet.