ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
P-CHANNEL ENHANCEMENT MODE MOSFE
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current4.4 A
On-resistance55 mΩMax · 4.4A
Gate threshold voltage1.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Power Dissipation (Max) | 1.2W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 15 V |
| Mfr | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.4A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |