Diodes IncorporatedUnited States
BC847BFAQ
Single Bipolar TransistorsAll alternatives
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Technical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 0.1A |
| VCEO-集射级击穿电压 | 45V |
| AC and DC characteristics | |
| fT-变换频率 | 100MHZ |
| hFE-最小直流增益 | 200 |
| Environment and package | |
| 封装类型1 | X2DFN0806 |
| Other | |
| Pd-功率耗散 | 0.435W |
| VCE(sat)-集射级饱和压降 | 0.125V |
| 引脚数量1 | 3 |