Infineon TechnologiesGermany
LOW-NOISE SI TRANSISTOR
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 40mA |
| Power - Max | 100mW |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 20mA, 2V |
| Frequency - Transition | 45GHz |
| Gain | 22.5dB |
| Noise Figure (dB Typ @ f) | 0.95dB @ 1.8GHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | 4-TSFP |
| Other | |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
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