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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage20 V
Collector current25 mAMax
DC current gain407mA
Power200 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)25 mA
Power - Max200 mW
Voltage - Collector Emitter Breakdown (Max)20 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 7mA, 10V
Frequency - Transition450MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageStrip
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
MfrDiotec Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

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