BORN(伯恩半导体)China
2.1A 20V 59mΩ NMOS
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current2.1 A
On-resistance115 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 2.1A |
| Other | |
| 导通电阻(RDS(on)) | 115mΩ@2.5V |
| 数量 | 1个N沟道 |