Cmos(广东场效应半导体)China
CMD60R360D
Transistors - FETs, MOSFETs - SingleCOOLMOS，TO-252，N沟道，耐压：600V,电流：11A,10V内阻：0.36mΩ, 功率：85W，Ciss（Typ）：500pF
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View full reportTechnical parameters
Key specs
Drain-source voltage600 V
Continuous drain current11 A
On-resistance360 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 600V |
| 连续漏极电流(Id) | 11A |
| Other | |
| 导通电阻(RDS(on)) | 360mΩ@10V |
| 耗散功率(Pd) | 85W |