Cmos(广东场效应半导体)China
1个N沟道 耐压:80V 电流:160A
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current160 A
On-resistance4.2 mΩMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 80V |
| 连续漏极电流(Id) | 160A |
| Other | |
| 导通电阻(RDS(on)) | 4.2mΩ |
| 数量 | 1个N沟道 |