Applied Power(应能微)China
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23-3L |
| Other | |
| Configuration | Single |
| ID(A) | -2.4 |
| N/P | P |
| Plateform | Trench MOSFET |
| Rdson @VGS10V Max(mΩ) | 32 |
| Rdson @VGS10V Typ(mΩ) | 26 |
| Rdson @VGS4.5V Max(mΩ) | 43 |
| Rdson @VGS4.5V Typ(mΩ) | 33 |
| VDSS(V) | -30 |
| VGS(th) Max | -2.5 |
| VGS(th) Min | -1 |
| VGS(V) | ±20 |