Cmos(广东场效应半导体)China
1个N沟道 耐压:65V 电流:130A
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage65 V
Continuous drain current130 A
On-resistance5.8 mΩMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 65V |
| 连续漏极电流(Id) | 130A |
| Other | |
| 导通电阻(RDS(on)) | 5.8mΩ |
| 数量 | 1个N沟道 |