VBsemi(微碧半导体)China
CMP40P03-VB
Transistors - FETs, MOSFETs - SingleTO220F；P—Channel沟道,-30V；-55A；RDS(ON)=11mΩ@VGS=10V,VGS=20V；Vth=-1~-3V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current55 A
On-resistance13 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 55A |
| Other | |
| 导通电阻(RDS(on)) | 13mΩ@4.5V |
| 数量 | 1个P沟道 |