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HomeCentral Semiconductor CorpCS18B
CS18B
Central Semiconductor CorpUnited States

CS18B

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Technical parameters

di/dt-通态电流上升率NA/us
dv/dt-断态电压上升率25V/us
IGT-直流门极触发电流0.2mA
IH-保持电流5mA
ITRMS-通态电流有效值1A
ITSM-不可重复峰值通态电流10A
VDRM-断态可重复峰值电压200V
VTM-通态电压峰值2.15V

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DatasheetDatasheet · 606.9 KB · 2026-09-22DatasheetDatasheet · 318.6 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22OtherOther · 491.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 467.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 172.4 KB · 2026-09-22EnvironmentalEnvironmental · 106.6 KB · 2026-09-22
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