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Technical parameters

Power
ID-最大漏极电流6A
VDSS-最大漏源电压400V
Vgs(th)-门槛电压4V
AC and DC characteristics
RDS(on)-漏源导通阻抗1000mΩ
Environment and package
封装类型1TO262
Other
Qg-栅极电荷14.5nC
内置ESD保护二极管0
内置整流二极管0
引脚数量13

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