Texas InstrumentsUnited States
MOSFET P-CH 12V 2.3A 3PICOSTAR
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current2.3 A
On-resistance175 mΩMax · 500mA
Gate threshold voltage1.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 3-XFDFN |
| Supplier Device Package | 3-PICOSTAR |
| Other | |
| Base Product Number | CSD23381 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 236 pF @ 6 V |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 500mA, 4.5V |
| Series | NexFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -8V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |