SHINDENGEN(新电元)Japan
This diode uses a barrier that is formed with a metal-semiconductor junction. Compared to the one using a P-N junction, the forward rise voltage is lower and the switching speed is extremely high, making it the most suitable rectifier for high speed low V F diodes. S series：Balanced V F and I R M series：Balanced I R and Low V F N series：High Voltage H series：Ultra Low V F J series：Low I R SL series：Ultra Low I R , Tj = 175℃ guaranteed Y series：Balanced low I R
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View full reportTechnical parameters
Key specs
Reverse voltage60 V
Average rectified current3 A
| Power | |
|---|---|
| Average forward current | 1.95 |
| Forward voltage | 0.78 |
| Repetitive peak reverse voltage | 60 |
| Reverse current | 0.008 |
| Surge forward current | 90 |
| Environment and package | |
| Junction temperature | -55 to 175 |
| Package (House Name) | CE |
| Package (JEITA Code) | SC-110B |
| Storage temperrature | -55 to 175 |
| Temperrature1 | Tl |
| Temperrature2 | Tl |
| Thermal resistance | 120 |
| Other | |
| As | Not identified |
| Automotive | YES |
| Br | Not identified |
| Conditions | Junction to ambient ※ |
| Ctrl Number | D3CE6ST_Rev.01(2024.10) |
| Diag01 | D3CE6ST_ページ_01.jpg |
| Diag02 | D3CE6ST_ページ_02.jpg |
| Diag03 | D3CE6ST_ページ_03.jpg |
| Diag04 | D3CE6ST_ページ_04.jpg |
| Diag05 | D3CE6ST_ページ_05.jpg |
| Diag06 | D3CE6ST_ページ_06.jpg |
| Diag07 | D3CE6ST_ページ_07.jpg |
| Diag08 | D3CE6ST_ページ_08.jpg |
| Diag09 | D3CE6ST_ページ_09.jpg |
| Diag10 | D3CE6ST_ページ_10.jpg |
| Evidence | 1SK-248049-1 |
| I F (AV) | 3A |
| I FSM | 90A |
| Ni | Not identified |
| Order Quantity | FAQをご確認ください。 |
| Pb | Not identified |
| Rp | Not identified |
| Sb | Not identified |
| Series | SL series |
| Spec Code | 5063R |
| Total capacitance | 82 |
| V F (max.) | 0.78V |
| V RRM | 60V |