Diodes IncorporatedUnited States
40V +175°C N-Channel Enhancement Mode MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| AEC Qualified | No |
| Other | |
| C ISS Condition @|V DS | (V) | 20 V |
| C ISS Typ (pF) | 881 pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |I DS | @T A = +25°C (A) | 13.6 A |
| |I DS | @T C = +25°C (A) | 49 A |
| P D @T A = +25°C (W) | 2.9 W |
| P D @T C = +25°C (W) | 37.5 W |
| Polarity | N |
| Q G Typ @ |V GS | = 10V (nC) | 12.3 nC |
| Q G Typ @ |V GS | = 4.5V (nC) | 5.8 nC |
| R DS(ON) Max@ V GS (10V) (mΩ) | 8.9 mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 13.5 mΩ |
| |V DS | (V) | 40 V |
| |V GS(TH) | Max (V) | 2.3 V |
| |V GS(TH) | Min (V) | 1.2 V |
| |V GS | (±V) | 20 ±V |