IXYSUnited States
DIODE GP 1.2KV 110A DO203AB
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Technical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current110 A
Forward voltage1.17 VMax · 150 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 110A |
| Current - Reverse Leakage @ Vr | 6 mA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.17 V @ 150 A |
| Environment and package | |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction | -40°C~180°C |
| Package | Box |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-203AB |
| Other | |
| Base Product Number | DS75 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | IXYS |
| Product Status | Obsolete |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |